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IPD60N10S4-12 - Power-Transistor

Key Features

  • N-channel - Normal Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.2 mW 60 A PG-TO252-3-313 TAB 1 3 Type IPD60N10S4-12 Package Marking PG-TO252-3-313 4N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.