IPD60N10S4-12
IPD60N10S4-12 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Normal Level
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
100 V 12.2 m W 60 A
PG-TO252-3-313
1 3
Type IPD60N10S4-12
Package
Marking
PG-TO252-3-313 4N1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=30A
I AS
- V GS
- P tot T C=25°C
T j, T stg
- Value 60
240 120 40 ±20 94 -55 ... +175
Unit A m J A V W °C
Rev. 1.0 page 1
2014-06-30
Preliminary
Parameter...
