IPD60N10S4L-12
IPD60N10S4L-12 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Product Summary V DS R DS(on),max ID
100 V 12 m W 60 A
PG-TO252-3-313
1 3
Type IPD60N10S4L-12
Package
Marking
PG-TO252-3-313 4N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=30A
Avalanche current, single pulse
I AS
- Gate source voltage
V GS
- Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
- -
Value 60
240 120 40 +/-16 94 -55 ... +175 55/175/56
Unit A m J A V W...
