IPD70R900P7S - Power-Transistor

Infineon

Datasheet Details

Part number	IPD70R900P7S
Manufacturer	Infineon
File Size	1.10 MB
Description	Power-Transistor
Datasheet	IPD70R900P7S Datasheet

Overview

IPD70R900P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.

ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc.

ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.

Key Features

Extremely low losses due to very low FOM RDS(on).
Qg and RDS(on).
Eoss.
Excellent thermal behavior.
Integrated ESD protection diode.
Low switching losses (Eoss).
Product validation acc. JEDEC Standard Benefits.
Cost competitive technology.
Lower temperature.
High ESD rugge.

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