IPD80R1K4CE mosfet equivalent, mosfet.
*Highvoltagetechnology
*Extremedv/dtrated
*Highpeakcurrentcapability
*Lowgatecharge
*Loweffectivecapacitances
*Qualified accordi.
*LEDLightingforretrofitapplicationsinQRFlybacktopology
Table1KeyPerformanceParameters
Parameter V.
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackage.
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