IPDQ60R016CM8
IPDQ60R016CM8 is MOSFET manufactured by Infineon.
Features
- Suitableforhardandsoftswitchingtopologiesthankstoan outstandingmutationruggedness
- Significantreductionofswitchingandconductionlosses
- Bestinclass RDS(on)perpackageproductsenabledbyultralow RDS(on)- A
Benefits
- Easeofuseandfastdesign-inthroughlowringingtendencyandusage across PFCand PWMstages
- Simplifiedthermalmanagementthankstoouradvanceddieattach technique
- Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualityduestateoftheart ESDprotection
- Suitableforawidevarietyofapplicationsandpowerranges
Drain Pin 12-22, Tab
Gate Pin 1
Driver Source Pin 2
- 1: Internal body diode
- 1
Power Source Pin 3-11
Potentialapplications
- Powersuppliesandconverters
- PFCstages&LLCresonantconverters
- Highefficiencyswitchingapplications
- e.g.Server,Tele,EVCharging,UPS
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
16 mΩ
Qg,typ
171 n C
ID,pulse
Eoss @ 400V
µJ
Body diode di...
