IPDQ60R007CM8 - high voltage power MOSFET

Datasheet Summary

Description

Features

Suitable for hard and soft switching topologies thanks to an   outstanding commutation ruggedness.
Significant reduction of switching and conduction losses.
Best in class RDS(on) per package products enabled by ultra low RDS(on).
A Benefits.
Ease of use and fast design-in through low ringing tendency and usage   across PFC and PWM stages.
Simplified thermal management thanks to our advanced die attach   technique.
Increased power densi.

Infineon

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Datasheet Details

Part number	IPDQ60R007CM8
Manufacturer	Infineon
File Size	1.13 MB
Description	high voltage power MOSFET
Datasheet	IPDQ60R007CM8 Datasheet
Additional preview pages of the IPDQ60R007CM8 datasheet.

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Full PDF Text Transcription

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IPDQ60R007CM8 MOSFET 600VCoolMOSªCM8PowerTransistor PG-HDSOP-22 TheCoolMOS™8thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V 22 CoolMOS™CM8seriesisthesuccessortotheCoolMOS™7. ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellent 12 TAB easeofuse,e.glowringingtendency,implementedfastbodydiode(CFD) 1 forallproductswithoutstandingrobustnessagainsthardcommutationand 11 excellentESDcapability.Furthermore,extremelylowswitchingand conductionlossesofCM8,makeswitchingapplicationsevenmore efficient.

Published: Nov 28, 2024 |