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IPG16N10S4-61A - Power-Transistor

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Infineon

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IPG16N10S4-61A Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPG16N10S4-61A

Datasheet Details

Part number	IPG16N10S4-61A
Manufacturer	Infineon
File Size	742.85 KB
Description	Power-Transistor
Datasheet	IPG16N10S4-61A Datasheet
Additional preview pages of the IPG16N10S4-61A datasheet.

Product details

Features

Dual N-channel Normal Level - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested.
Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8-10 Type IPG16N10S4-61A Package Marking PG-TDSON-8-10 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions.

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Published: Feb 15, 2016 |