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IPG16N10S4-61

Manufacturer: Infineon
IPG16N10S4-61 datasheet preview

Datasheet Details

Part number IPG16N10S4-61
Datasheet IPG16N10S4-61-InfineonTechnologies.pdf
File Size 253.56 KB
Manufacturer Infineon
Description Power-Transistor
IPG16N10S4-61 page 2 IPG16N10S4-61 page 3

IPG16N10S4-61 Overview

OptiMOS™-T2 Power-Transistor.

IPG16N10S4-61 Key Features

  • Dual N-channel Normal Level
  • Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • RoHS pliant
  • 100% Avalanche tested
  • E AS I AS V GS
  • 55 ... +175
  • case SMD version, device on PCB

IPG16N10S4-61A from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Infineon Logo IPG16N10S4-61A Power-Transistor Infineon
Infineon logo - Manufacturer

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