Datasheet4U.com

IPG16N10S4-61 - Power-Transistor

Product Overview

Infineon Technologies

📥 Download Datasheet

IPG16N10S4-61 Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPG16N10S4-61

Datasheet Details

Part number	IPG16N10S4-61
Manufacturer	Infineon Technologies
File Size	253.56 KB
Description	Power-Transistor
Datasheet	IPG16N10S4-61 Datasheet
Additional preview pages of the IPG16N10S4-61 datasheet.

Product details

Features

Dual N-channel Normal Level - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8 87 65 12 34 87 65 Type IPG16N10S4-61 Package PG-TDSON-8 Marking 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one.

📁 Similar Datasheet

IPG16N10S4-61A - Power-Transistor (Infineon)
IPG16N10S4L-61A - Power-Transistor (Infineon)
IPG15N06S3L-45 - Power Transistor (Infineon)
IPG20N04S4-08 - Power Transistor (Infineon)
IPG20N04S4-08A - Power-Transistor (Infineon)
IPG20N04S4-09 - Power Transistor (Infineon)
IPG20N04S4-09A - Power Transistor (Infineon)
IPG20N04S4-12 - Power Transistor (Infineon)

Other Datasheets by Infineon Technologies

IPG20N10S4L-22 - Power-Transistor
IPG20N10S4L-35A - Power-Transistor

Published: May 30, 2015 |