IPG16N10S4-61
IPG16N10S4-61 is Power-Transistor manufactured by Infineon.
OptiMOS™-T2 Power-Transistor
Features
- Dual N-channel Normal Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
Product Summary VDS RDS(on),max3) ID
100 V 61 mW 16 A
PG-TDSON-8
87 65
12 34
Type IPG16N10S4-61
Package PG-TDSON-8
Marking 4N1061
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
T C=25 °C, V GS=10 V
Pulsed drain current1) one channel active
Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage
Power dissipation one channel...
