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IPG16N10S4-61A - Power-Transistor

Key Features

  • Dual N-channel Normal Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested.
  • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8-10 Type IPG16N10S4-61A Package Marking PG-TDSON-8-10 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPG16N10S4-61A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8-10 Type IPG16N10S4-61A Package Marking PG-TDSON-8-10 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active ID T C=25 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V1) I D,pulse - E AS I AS V GS I D=8A