Download IPG20N04S4-09 Datasheet PDF
IPG20N04S4-09 page 2
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IPG20N04S4-09 page 3
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IPG20N04S4-09 Description

IPG20N04S4-09 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 8.6 20 V mW.

IPG20N04S4-09 Key Features

  • Dual N-channel Normal Level
  • Enhancement mode PG-TDSON-8-4
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS pliant)
  • 100% Avalanche tested
  • 1730 440 13 12 3 15 10
  • 9.1 2.9 21.7 5.3