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IPG20N04S4-09A - Power Transistor

Key Features

  • Dual N-channel Normal Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested.
  • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 40 V 8.6 mW 20 A PG-TDSON-8 1 Type IPG20N04S4-09A Package PG-TDSON-8 Marking 4N0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPG20N04S4-09A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 40 V 8.