• Part: IPG20N04S4-08
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 153.90 KB
Download IPG20N04S4-08 Datasheet PDF
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Datasheet Summary

OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 7.6 20 V mW A Features - Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Type IPG20N04S4-08 Package PG-TDSON-8-4 Marking 4N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation...