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Infineon Technologies Electronic Components Datasheet

IPI084N06L3G Datasheet

Power-Transistor

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Type
OptiMOS3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Product Summary
VDS
RDS(on),max (SMD)
ID
60 V
8.1 mΩ
50 A
Type
IPB081N06L3 G
IPP084N06L3 G
IPI084N06L3 G
Package
Marking
PG-TO263-3
081N06L
PG-TO220-3
084N06L
PG-TO262-3
084N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C2)
T C=100 °C
I D,pulse T C=25 °C
E AS I D=50 A, R GS=25 Ω
V GS
P tot T C=25 °C
T j, T stg
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=1.9 K/W the chip is able to carry 73 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
50
50
200
43
±20
79
-55 ... 175
Unit
A
mJ
V
W
°C
Rev. 2.24
page 1
2012-11-28


Infineon Technologies Electronic Components Datasheet

IPI084N06L3G Datasheet

Power-Transistor

No Preview Available !

IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area5)
-
-
-
- 1.9 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=34 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=50 A
V GS=4.5 V, I D=25 A
60
1.2
-
-
-
-
-
- -V
1.7 2.2
0.1 1 µA
10 100
1 100 nA
7.0 8.4 mΩ
9.7 14.3
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A,
(SMD)
-
6.7 8.1
Gate resistance
Transconductance
V GS=4.5 V, I D=25 A,
(SMD)
-
9.4 14
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
35
0.9
69
-Ω
-S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.24
page 2
2012-11-28


Part Number IPI084N06L3G
Description Power-Transistor
Maker Infineon
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IPI084N06L3G Datasheet PDF






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