650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.650VCoolMOS™CFD2series
combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh
classinnovation.Theresultingdevicesprovideallbenefitsofafast
switchingSJMOSFETwhileofferinganextremelyfastandrobustbody
diode.Thiscombinationofextremelylowswitching,commutationand
conductionlossestogetherwithhighestrobustnessmakeespecially
resonantswitchingapplicationsmorereliable,moreefficient,lighterand
cooler.
ThinPAK
ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew
packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe
D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe
D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark
lowparasiticinductances,providesdesignerswithanewandeffectiveway
todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Features
•Reducedboardspaceconsumption
•Increasedpowerdensity
•Shortcommutationloop
•Smoothswitchingwaveform
•Ultra-fastbodydiode
•Veryhighcommutationruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Easytouse/drive
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC
(J-STD20andJESD22)
•Pb-freeplating,Halogenfreemoldcompound
Applications
650VCoolMOS™CFD2isespeciallysuitableforresonantswitching
stagesfore.g.PCSilverbox,LCDTV,Lighting,ServerandTelecom.
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj max
RDS(on),max
700
0.165
V
Ω
Qg,typ
86
nC
ID,pulse
67
A
Eoss @ 400V
6.8
µJ
Body diode di/dt
900
A/µs
Qrr 0.7 µC
trr 140 ns
Irrm 8.8
A
Type/OrderingCode
IPL65R165CFD
Final Data Sheet
Package
PG-VSON-4
Marking
65F6165
2
RelatedLinks
see Appendix A
Rev.2.0,2014-03-19
