IPL65R165CFD
IPL65R165CFD is MOSFET manufactured by Infineon.
Description
Cool MOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon Technologies.650VCool MOS™CFD2series binestheexperienceoftheleading SJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switching SJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thisbinationofextremelylowswitching,mutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighterand cooler. Thin PAK Thin PAKisaanewleadless SMDpackagefor HVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,binedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Features
- Reducedboardspaceconsumption
- Increasedpowerdensity
- Shortmutationloop
- Smoothswitchingwaveform
- Ultra-fastbodydiode
- Veryhighmutationruggedness
- Extremelylowlossesduetoverylow FOMRdson- Qgand Eoss
- Easytouse/drive
- Qualifiedforindustrialgradeapplicationsaccordingto JEDEC (J-STD20and JESD22)
- Pb-freeplating,Halogenfreemoldpound
Applications
650VCool MOS™CFD2isespeciallysuitableforresonantswitching stagesfore.g.PCSilverbox,LCDTV,Lighting,Serverand Tele.
Thin PAK8x8
Drain Pin 5
Gate Pin 1
Driver Source
Pin 2
Power
Source
Pin 3,4
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj max RDS(on),max
700 0.165
V Ω
Qg,typ
86 n C
ID,pulse
Eoss @ 400V
µJ
Body diode...
