IPP040N06N3 - Power Transistor

This page provides the datasheet information for the IPP040N06N3, a member of the IPP040N06N3G Power Transistor family.

Datasheet Summary

Description

Features

for sync. rectification, drives and dc/dc SMPS.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
Avalanche rated.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPP040N06N3
Manufacturer	Infineon
File Size	1.57 MB
Description	Power Transistor
Datasheet	IPP040N06N3 Datasheet
Additional preview pages of the IPP040N06N3 datasheet.

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Full PDF Text Transcription

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IPP040N06N3G MOSFET OptiMOSª3Power-Transistor,60V Features •forsync.rectification,drivesanddc/dcSMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •Avalancherated •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 4 mΩ ID 130 A TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP040N06N3 G Package PG-TO 220-3 Marking 040N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPP040N06N3G TableofContents Description . . . . . . . . . . . . .

Published: Oct 2, 2020 |