IPP040N06N3
Description
Sheet 2 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPP040N06N3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- forsync.rectification,drivesanddc/dcSMPS
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- N-channel,normallevel
- Avalancherated
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeplating;RoHSpliant
