Part IPP076N12N3
Description Power-Transistor
Category Transistor
Manufacturer Infineon
Size 483.78 KB
Infineon
IPP076N12N3

Overview

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant; halogen free
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification Type