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IPP110N20N3 Datasheet Power-Transistor

Manufacturer: Infineon

Download the IPP110N20N3 datasheet PDF. This datasheet also includes the IPP110N20N3G variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP110N20N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Overview

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPP110N20N3 N-Channel MOSFET INCHANGE
Infineon Technologies Logo IPP110N20N3G Power Transistor Infineon Technologies

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