IPP110N20N3 Datasheet and Specifications PDF

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Su.

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for target application.

isc N-Channel MOSFET Transistor IPP110N20N3，IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot.

*Static drain-source on-resistance: RDS(on) ≤11mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Ideal for high-frequency switching and synchronous rectification
*ABSOLUTE MAXIMUM RATIN.