IPP110N20N3G Datasheet | Infineon

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application - Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max (TO263) ID 200 10.7 88 V mW A - Ideal for high-frequency switching and synchronous rectification Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain...