IPP110N20NA Description
IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor.
IPP110N20NA Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification