IPP110N20NA Datasheet and Specifications PDF

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),.

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to AEC Q101
* Halogen-free according to IEC61249-2-.

isc N-Channel MOSFET Transistor IPP110N20NA，IIPP110N20NA ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot.

*Static drain-source on-resistance: RDS(on) ≤11mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
* Ideal for high-frequency switching and synchronous rectification
*ABSOLUTE MAXIMUM RATI.