Datasheet4U Logo Datasheet4U.com

IPP110N20N3 - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤11mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP110N20N3 Power-Transistor Infineon
IPP110N20N3G Power Transistor Infineon Technologies
IPP110N20NA Power-Transistor Infineon
IPP110N06L Power-Transistor Infineon
IPP110N06LG Power-Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP110N20NA N-Channel MOSFET
IPP111N15N3 N-Channel MOSFET
IPP114N12N3 N-Channel MOSFET
IPP100N08N3 N-Channel MOSFET
IPP120N20NFD N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP110N20N3，IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 352 PD Total Dissipation @TC=25℃ 300 Tj Max.