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IPP120N20NFD - MOSFET

Key Features

  • N-channel, normal level.
  • Fast Diode (FD) with reduced Qrr.
  • Optimized for hard commutation ruggedness.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC 1) for target.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMFDPower-Transistor,200V IPP120N20NFD DataSheet Rev.2.