IPP200N25N3
IPP200N25N3 is Power-Transistor manufactured by Infineon.
- Part of the IPP200N25N3G comparator family.
- Part of the IPP200N25N3G comparator family.
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
250 V 20 mW 64 A
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package Marking
PG-TO263-3 200N25N
PG-TO220-3 200N25N
PG-TO262-3 200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol...
