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Infineon Technologies Electronic Components Datasheet

IPP80P03P3L-04 Datasheet

Power-Transistor

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IPP80P03P3L-04 pdf
Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
OptiMOS-P Power-Transistor
Feature
P-Channel
Enhancement mode
Logic Level
Automotive AEC Q101 qualified
P- TO262 -3-1
Product Summary
VDS -30 V
RDS(on) max. SMD version
4
m
ID -80 A
P- TO263 -3-2
P- TO220 -3-1
Green package (lead free)
MSL1 up to 260°C
peak reflow temperature
175°C operating temperature
Avalanche rated
dv/dt rated
Type
IPP80P03P3L-04
Package
Ordering Code
P- TO220 -3-1 -
Marking
3P03L04
Gate
pin1
Drain
pin 2
Source
pin 3
IPB80P03P3L-04 P- TO263 -3-2 -
3P03L04
IPI80P03P3L-04 P- TO262 -3-1 -
3P03L04
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=-80 A , VDD=-25V, RGS=25
ID
ID puls
EAS
Reverse diode dv/dt
dv/dt
IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
VGS
Power dissipation
TC=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
-80
-80
-320
432
-6
±20
200
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2004-03-04


Infineon Technologies Electronic Components Datasheet

IPP80P03P3L-04 Datasheet

Power-Transistor

No Preview Available !

IPP80P03P3L-04 pdf
Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 0.5 0.75 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS -30
-
-V
VGS=0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID=-430µA
Zero gate voltage drain current
VDS=-30V, VGS=0, Tj=25°C
VDS=-30V, VGS=0, Tj=150°C3)
Gate-source leakage current
VGS20V, VDS=0
Drain-source on-state resistance4)
VGS=-4.5V, ID=-50A
VGS=-4.5V, ID=-50A, SMD version
Drain-source on-state resistance4)
VGS=-10V, ID=-80A
VGS=-10V, ID=-80A, SMD version
VGS(th)
-1 -1.5 -2
I DSS
I GSS
µA
- -0.1 -1
- -10 -100
- ± 10 ± 100 nA
RDS(on)
m
- 6.3 7.6
- 6 7.3
RDS(on)
- 3.5 4.3
- 3.2 4
1Current limited by bondwire ; with anRthJC = 0.75K/W the chip is able to carry ID= 171A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t10 sec.
3Defined by design. Not subject to production test.
4Diagrams are related to straight lead versions
Page 2
2004-03-04


Part Number IPP80P03P3L-04
Description Power-Transistor
Maker Infineon
Total Page 4 Pages
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