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Infineon Technologies Electronic Components Datasheet

IPS12CN10LG Datasheet

Power-Transistor

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OptiMOS®2 Power-Transistor
Features
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
IPS12CN10L G
IPP12CN10L G
100 V
12 mW
69 A
Package
PG-TO220-3
PG-TO251-3-11
Marking
12CN10L
12CN10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=69 A, R GS=25 W
Reverse diode dv /dt
dv /dt
I D=69 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.03
page 1
Value
69
49
276
150
6
±20
125
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2011-09-05


Infineon Technologies Electronic Components Datasheet

IPS12CN10LG Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
IPS12CN10L G
IPP12CN10L G
min.
Values
typ.
Unit
max.
- - 1.2 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=83 µA
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
100
1.2
-
V DS=80 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=4.5 V, I D=34.5 A,
(TO220)
-
-
-
V GS=10 V, I D=69 A,
(TO220)
-
V GS=4.5 V, I D=34.5 A,
(TO251)
-
V GS=10 V, I D=69 A,
(TO251)
-
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=69 A
57
- -V
1.84 2.4
0.1 1 µA
10 100
1 100 nA
11.7 15.8 mW
9.9 12
11.7 15.8
9.9 11.8
1.3 - W
113 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.03
page 2
2011-09-05


Part Number IPS12CN10LG
Description Power-Transistor
Maker Infineon
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IPS12CN10LG Datasheet PDF






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