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IPS12CN10LG Power-Transistor

IPS12CN10LG Description

OptiMOS®2 Power-Transistor .

IPS12CN10LG Features

* N-channel, logic level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

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Power-Transistor Infineon
Infineon IPS12CN10LG-like datasheet