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IPS65R1K4C6 - MOSFET

Datasheet Summary

Description

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Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • Pb-free plating, Halogen free mold compound.
  • Qualified for industrial grade.

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Datasheet preview – IPS65R1K4C6

Datasheet Details

Part number IPS65R1K4C6
Manufacturer Infineon
File Size 1.01 MB
Description MOSFET
Datasheet download datasheet IPS65R1K4C6 Datasheet
Additional preview pages of the IPS65R1K4C6 datasheet.

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Full PDF Text Transcription

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IPS65R1K4C6 MOSFET 650VCoolMOSªC6PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
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