IPS65R600E6 Datasheet | Infineon

Description Cool MOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon Technologies.Cool MOS™E6seriesbinesthe experienceoftheleading SJMOSFETsupplierwithhighclassinnovation. Theresultingdevicesprovideallbenefitsofafastswitching Superjunction MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand conductionlossesmakeswitchingapplicationsevenmoreefficient,more pact,lighterandcooler. Features - Extremelylowlossesduetoverylow FOMRdson- Qgand Eoss - Veryhighmutationruggedness - Easytouse/drive - Pb-freeplating,Halogenfreemoldpound - Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22) Applications PFCstages,hardswitching PWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVand Lighting,Server, Teleand UPS Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. IPAKSL tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg.typ ID,pulse Eoss@400V 700 600 23 18 2 V mΩ n C A µJ Body diode di/dt A/µs Type/Ordering Code IPS65R600E6 Package PG-TO 251 Marking 65E6600 Related Links see Appendix A Final Data Sheet 2 Rev.2.0,2015-04-23 650VCool MOS™E6Power Transistor Tableof Contents Description - - - - - - - - - - -...