IPS65R1K4C6
IPS65R1K4C6 is MOSFET manufactured by Infineon.
Features
- Extremelylowlossesduetoverylow FOMRdson- Qgand Eoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22)
Potentialapplications
PFCstages,hardswitching PWMstagesandresonantswitching PWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, Teleand UPS.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj max
RDS(on),max
Ω
Qg,typ
10.5 n C
ID,pulse
Eoss @ 400V
µJ
Body diode di/dt
A/µs
Type/Ordering Code IPS65R1K4C6
Package PG-TO 251-3
Marking 65C61K4
IPAKSL tab
Gate Pin 1
Drain Pin 2
Source Pin 3
Related Links see Appendix A
Final Data Sheet
1 Rev.2.1,2017-07-25
650VCool MOSªC6Power Transistor
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