IPTG029N13NM6
IPTG029N13NM6 is MOSFET manufactured by Infineon.
MOSFET
Opti MOSTM6Power-Transistor,135V
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- 100%avalanchetested
- 175°Coperatingtemperature
- Optimizedformotordrivesandbatterypoweredapplications
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
2.9 mΩ
Qoss
180 n C
QG(0V..10V)
104 n C
Qrr(500A/µs)
118 n C
Type/Ordering Code IPTG029N13NM6
Package PG-HSOG-8
1...
