IPU80R4K5P7
IPU80R4K5P7 is MOSFET manufactured by Infineon.
Features
- Best-in-class FOMRDS(on)- Eoss;reduced Qg,Ciss,and Coss
- Best-in-class DPAKRDS(on)
- Best-in-class V(GS)thof3Vandsmallest V(GS)thvariationof±0.5V
- Integrated Zener Diode ESDprotection
- Fullyqualifiedacc.JEDECfor Industrial Applications
- Fullyoptimizedportfolio
Benefits
- Best-in-classperformance
- Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
- Easytodriveandtoparallel
- Betterproductionyieldbyreducing ESDrelatedfailures
- Lessproductionissuesandreducedfieldreturns
- Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
Remendedforhardandsoftswitchingflybacktopologiesfor LED Lighting,lowpower Chargersand Adapters,Audio,AUXpowerand Industrialpower.Alsosuitablefor PFCstagein Consumerapplications and Solar.
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyremended.
IPAK tab
12 3
Drain Pin 2, Tab Gate Pin 1
Source Pin 3
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Ω
Qg,typ
4 n C
Eoss @ 500V
µJ
VGS(th),typ
ESD class (HBM) 1C
- Type/Ordering Code...
