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IPW60R017C7 - MOSFET

Key Features

  • Suitable for hard and soft switching (PFC and high performance LLC).
  • Increased MOSFET dv/dt ruggedness to 120V/ns.
  • Increased efficiency due to best in class FOM RDS(on).
  • Eoss and RDS(on).
  • Qg.
  • Best in class RDS(on) /package.
  • Qualified for industrial grade.

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Full PDF Text Transcription for IPW60R017C7 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPW60R017C7. For precise diagrams, tables, and layout, please refer to the original PDF.

IPW60R017C7 MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ...

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ighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².