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IQE006NE2LM5 - MOSFET

IQE006NE2LM5 Description

IQE006NE2LM5 MOSFET OptiMOSTM 5 Power-Transistor, 25 V .

IQE006NE2LM5 Features

* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* Superior thermal resistance
* N-channel
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for In

IQE006NE2LM5 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 25 V RDS(on),max 0.65 mΩ ID 298 A Qoss 41 nC QG(0V. .4.5V) 29 nC PG-TSON-8-4 876 5 12 3 4 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 Type / Ordering Code IQE006NE2LM5 Package PG-TSON-8-4 Marking 006E2L5 Related Li

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