Datasheet Summary
MOSFET
OptiMOSTM5Power-Transistor,25V
Features
- Verylowon-resistanceRDS(on)@VGS=4.5V
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
0.65 mΩ
Qoss
41 nC
QG(0V..4.5V)
29 nC
PG-TSON-8-4
876 5
12 3 4
Drain Pin 5-8
Gate Pin 4
Source Pin 1-3
Type/OrderingCode IQE006NE2LM5
Package PG-TSON-8-4
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