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IQE006NE2LM5 - MOSFET

Description

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Features

  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IQE006NE2LM5 MOSFET OptiMOSTM5Power-Transistor,25V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.65 mΩ ID 298 A Qoss 41 nC QG(0V..4.5V) 29 nC PG-TSON-8-4 876 5 12 3 4 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 Type/OrderingCode IQE006NE2LM5 Package PG-TSON-8-4 Marking 006E2L5 RelatedLinks - Final Data Sheet 1 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5 TableofContents Description . . . . . . . . . . . . . . . .
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