Datasheet Summary
Public
IQE046N08LM5CGSC Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 80 V
Features
- Optimized for high performance SMPS, e.g. synchronous rectification
- N‑channel, logic level
- Very low on‑resistance RDS(on)
- Superior thermal resistance
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
RDS(on),max@10V
4.6 mΩ
RDS(on),max@4.5V
5.9 mΩ
Qoss
39 nC
QG (0V...4.5V)
19 nC
PG‑WHTFN‑9 (3x3)
Pin 1 2 3 4
5 678
9...