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Infineon Technologies Electronic Components Datasheet

IRF1324S-7PPbF Datasheet

Power MOSFET

No Preview Available !

Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRF1324S-7PPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
24V
0.8m
1.0m
429A
240A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
G
Gate
D2Pak 7 Pin
D
Drain
S
Source
Base Part Number
IRF1324S-7PPbF
Package Type
D2Pak 7 Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy (Thermally Limited)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient
Max.
429
303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
230
mJ
See Fig.14,15, 18a, 18b
A
mJ
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-15


Infineon Technologies Electronic Components Datasheet

IRF1324S-7PPbF Datasheet

Power MOSFET

No Preview Available !

IRF1324S-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
24 ––– ––– V VGS = 0V, ID = 250µA
––– 0.023 ––– V/°C Reference to 25°C, ID = 5mA
––– 0.80 1.0 m VGS = 10V, ID = 160A 
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
–––
–––
–––
–––
20
250
µA
VDS =24V, VGS = 0V
VDS =19V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 20V
VGS = -20V
––– 3.0 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
190 ––– ––– S VDS = 15V, ID = 160A
––– 180 252
ID = 75A
––– 47 –––
VDS = 12V
––– 58 ––– nC VGS = 10V
––– 122 –––
––– 19 –––
––– 240 –––
––– 86 –––
––– 93 –––
––– 7700 –––
––– 3380 –––
VDD = 16V
ns
ID = 160A
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 19V
––– 1930 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss eff.(ER)
Effective Output Capacitance (Energy Related) ––– 4780 –––
VGS = 0V, VDS = 0V to 19V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
––– 4970 –––
VGS = 0V, VDS = 0V to 19V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
–––
–––
––– 429
––– 1640
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– ––– 1.3
––– 71 107
––– 74 110
V TJ = 25°C,IS = 160A,VGS = 0V 
ns
TJ = 25°C
TJ = 125°C
VDD = 20V
IF = 160A,
–––
–––
83
92
120
140
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
––– 2.0 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.018mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above
this value.
ISD 160A, di/dt 600A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Ris measured at TJ approximately 90°C.
2
2015-10-15


Part Number IRF1324S-7PPbF
Description Power MOSFET
Maker Infineon
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IRF1324S-7PPbF Datasheet PDF






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