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Infineon Technologies Electronic Components Datasheet

IRF1407S Datasheet

Power MOSFET

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IRF1407SPbF
IRF1407LPbF
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-profile
applications.
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
75V
0.0078
100A
D
D
S
G
D2 Pak
IRF1407SPbF
S
GD
TO-262 Pak
IRF1407LPbF
G
Gate
D
Drain
S
Source
Base part number
IRF1407LPbF
IRF1407SPbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF1407LPbF (Obsolete)
IRF1407STRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
100
70
520
3.8
200
1.3
± 20
390
See Fig.15,16, 12a, 12b
4.6
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
2016-5-26


Infineon Technologies Electronic Components Datasheet

IRF1407S Datasheet

Power MOSFET

No Preview Available !

IRF1407S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
Source-Drain Ratings and Characteristics
75 ––– ––– V VGS = 0V, ID = 250µA
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.0078  VGS = 10V, ID = 78A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
74 ––– ––– S VDS = 25V, ID = 78A
––– –––
––– –––
20
250
µA
VDS =75 V, VGS = 0V
VDS = 60V,VGS = 0V,TJ =150°C
–––
–––
–––
200
-200
nA
VGS = 20V
VGS = -20V
––– 160 250
ID = 78A
––– 35 52 nC VDS = 60V
––– 54 81
––– 11 –––
––– 150 –––
––– 150 –––
––– 140 –––
––– 4.5 –––
––– 7.5 –––
VGS = 10V 
VDD = 38V
ns
ID =78A
RG= 2.5
VGS = 10V 
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
––– 5600 –––
VGS = 0V
––– 890 –––
––– 190 –––
––– 5800 –––
––– 560 –––
VDS = 25V
pF
ƒ = 1.0kHz, See Fig. 5
VGS = 0V, VDS = 1.0V ƒ = 1.0kHz
VGS = 0V, VDS = 60V ƒ = 1.0kHz
––– 1100 –––
VGS = 0V, VDS = 0V to 60V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
–––
–––
––– 100
––– 520
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 78A,VGS = 0V 
––– 110 170 ns TJ = 25°C ,IF = 78A
––– 390 590 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting TJ = 25°C, L = 0.13mH, RG = 25, IAS = 78A, VGS =10V. (See fig. 12)
ISD 78A, di/dt 320A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
Uses IRF1407 data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2016-5-26


Part Number IRF1407S
Description Power MOSFET
Maker Infineon
PDF Download

IRF1407S Datasheet PDF






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