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IRF1407LPbF - Power MOSFET

Download the IRF1407LPbF datasheet PDF. This datasheet also covers the IRF1407SPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1407SPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF1407LPbF Power MOSFETs International Rectifier
IRF1407L Power MOSFET International Rectifier
IRF1407L N-Channel MOSFET INCHANGE
IRF1407 Power MOSFET International Rectifier
IRF1407 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IRF1407L Power MOSFET
IRF1407S Power MOSFET
IRF1407SPbF Power MOSFET
IRF100P218 MOSFET
IRF100P219 100V Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.