Key Features
- Static drain-source on-resistance: RDS(on) ≤7.8mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
- IRF1407SPbF — Infineon — Power MOSFET
- IRF1407S — Infineon — Power MOSFET
- IRF1407SPbF — International Rectifier — Power MOSFETs
- IRF140 — Seme LAB — N-Channel Power MOSFET
- IRF140 — Fairchild Semiconductor — N-Channel Power MOSFET
- IRF1404ZPBF — International Rectifier — POWER MOSFET
- IRF1405ZLPbF — International Rectifier — HEXFET Power MOSFET
- IRF140SMD — Seme LAB — N-CHANNEL POWER MOSFET
- IRF1404Z — Kexin Semiconductor — N-Channel MOSFET
