IRF1404ZPBF
Features l l l l l l
IRF1404ZPb F IRF1404ZSPb F IRF1404ZLPb F
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 40V RDS(on) = 3.7mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
TO-220AB IRF1404ZPb F
D2Pak TO-262 IRF1404ZSPb F IRF1404ZLPb F
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C...
