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IRF1404ZSPBF - POWER MOSFET

Download the IRF1404ZSPBF datasheet PDF (IRF1404Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 3.7mΩ S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1404Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by International Rectifier

Full PDF Text Transcription

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www.DataSheet4U.com AUTOMOTIVE MOSFET PD - 96040 Features l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 3.7mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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