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IRF140 - N-Channel Power MOSFETs

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 28A and 25A, 80V and 100V.
  • rDS(ON) = 0.077Ω and 0.100Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.

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Datasheet Details

Part number IRF140
Manufacturer Harris
File Size 66.87 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF140 Datasheet

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Other Datasheets by Harris

Part Number Description
IRF141 N-Channel Power MOSFETs
IRF142 N-Channel Power MOSFETs
IRF143 N-Channel Power MOSFETs
IRF220 N-Channel Power MOSFETs
IRF221 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.