IRF140
Overview
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
- 28A and 25A, 80V and 100V
- rDS(ON) = 0.077Ω and 0.100Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power-Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
