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IRF1404LPbF - Power MOSFET

Download the IRF1404LPbF datasheet PDF. This datasheet also covers the IRF1404SPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • ard Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD www. irf. com.
  • VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs 7 IRF1404S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 30 S W IT H L OT CODE 8024 AS S E MB LE D ON WW 02, 2000 IN T H E AS S E M B L Y L IN E "L " IN T E R N.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1404SPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRF1404Z N-Channel MOSFET INCHANGE
IRF1404ZS N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1404L Power MOSFET
IRF1404 Power MOSFET
IRF1404PbF HEXFET Power MOSFET
IRF1404S Power MOSFET
IRF1404SPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G PD -95104 IRF1404SPbF IRF1404LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω S ID = 162A† The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.