Datasheet Details
| Part number | IRF1404Z |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 307.34 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF1404Z Datasheet
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General Description
Max.
Key Features
- l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make t.