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IRF140 - N-Channel MOSFET Transistor

General Description

Drain Current ID=27A@ TC=25℃ Drain Source Voltage- : VDSS= 100V(Min) Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching po

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·UPS,AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 27 A ID Drain Current-continuous@ TC=100℃ 17 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.