IRF141
DESCRIPTION
- Drain Current ID=27A@ TC=25℃
- Drain Source Voltage-
: VDSS= 60V(Min)
- Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max)
- High Power,High Speed Applications
APPLICATIONS
- Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
60 ±20
Drain Current-continuous@ TC=25℃ 27 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website：.iscsemi.cn
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold...
