Description
Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- D. U. T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD.
- VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs
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IRF1404S/L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT.
IRF1404L Datasheet
