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IRF142 - N-Channel Power MOSFETs

Download the IRF142 datasheet PDF. This datasheet also covers the IRF140 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 28A and 25A, 80V and 100V.
  • rDS(ON) = 0.077Ω and 0.100Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF140-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF142
Manufacturer Harris
File Size 66.87 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF142 Datasheet

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Other Datasheets by Harris

Part Number Description
IRF140 N-Channel Power MOSFETs
IRF141 N-Channel Power MOSFETs
IRF143 N-Channel Power MOSFETs
IRF220 N-Channel Power MOSFETs
IRF221 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.