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IRF1405LPbF - Power MOSFET

Download the IRF1405LPbF datasheet PDF. This datasheet also covers the IRF1405SPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1405SPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRF1405 N-Channel MOSFET INCHANGE
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IRF1405Z N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1405L Power MOSFET
IRF1405 Power MOSFET
IRF1405PBF Power MOSFET
IRF1405S Power MOSFET
IRF1405SPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.