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IRF6644PbF Datasheet IR MOSFET

Manufacturer: Infineon

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General Description

The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%.

Overview

IRF6644PbF IR MOSFET Quality Requirement Category: Consumer Applications  RoHS Compliant   Lead-Free (Qualified up to 260°C Reflow)  Application Specifies MOSFETs  Ideal for High Performance Isolated Converter Primary Switch Socket  Optimized for Synchronous Rectification  Low Conduction Losses  Low Profile (< 0.7mm)  Dual Sided Cooling Compatible   Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS 100V min.

Qg tot 28nC VGS ± 20V max Qgd 9.0nC RDS(on) (typ.) 10.3m@ 10V Vgs(th) 3.7V D G S D S MN DirectFET™ ISOMETRIC Applicable DirectFET® Outline and Substrate Outline (see pg.

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