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IRF6644 - DirectFETPower MOSFET

Datasheet Summary

Description

The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • -Drain Diode Forward Voltage 12 5.0 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) ID = 1.0A 10 4.5 ID = 1.0mA ID = 250µA ID = 150µA ID , Drain Current (A) 8 4.0 6 3.5 4 3.0 2 2.5 0 25 50 75 100 125 150 2.0 -50 -25 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 1000 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 2.8A 3.3A BOTTOM 6.2A TOP.

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PD - 96908C IRF6644 DirectFET™ Power MOSFET ‚ l l l l l l l l l Lead and Bromide Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 11.5nC RDS(on) Vgs(th) 3.7V 100V max ±20V max 10.7mΩ@ 10V 35nC MN Applicable DirectFET Outline and Substrate Outline (see p.
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